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Transistors - FETs, MOSFETs - Single

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  • Transistors - FETs, MOSFETs - Single
TSM120NA03CR RLG
Taiwan Semiconductor Corporation

TSM120NA03CR RLG

bahagi stock: 313

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 30V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 39A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 11A, 10V,

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TSM3N100CP ROG
Taiwan Semiconductor Corporation

TSM3N100CP ROG

bahagi stock: 428

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 1000V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 2.5A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V,

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TSM70N750CP ROG
Taiwan Semiconductor Corporation

TSM70N750CP ROG

bahagi stock: 379

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 700V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 6A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.8A, 10V,

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TSM70N380CP ROG
Taiwan Semiconductor Corporation

TSM70N380CP ROG

bahagi stock: 417

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 700V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 11A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.3A, 10V,

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TSM2308CX RFG
Taiwan Semiconductor Corporation

TSM2308CX RFG

bahagi stock: 348

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 3A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 156 mOhm @ 3A, 10V,

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TSM60NB190CM2 RNG
Taiwan Semiconductor Corporation

TSM60NB190CM2 RNG

bahagi stock: 4266

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 18A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 6A, 10V,

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TSM60NB150CF C0G
Taiwan Semiconductor Corporation

TSM60NB150CF C0G

bahagi stock: 1735

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 24A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.3A, 10V,

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TSM100N06CZ C0G
Taiwan Semiconductor Corporation

TSM100N06CZ C0G

bahagi stock: 3101

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 100A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V,

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TSM4424CS RVG
Taiwan Semiconductor Corporation

TSM4424CS RVG

bahagi stock: 2677

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 8A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V,

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TSM190N08CZ C0G
Taiwan Semiconductor Corporation

TSM190N08CZ C0G

bahagi stock: 4233

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 75V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 190A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 90A, 10V,

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TSM60NB041PW C1G
Taiwan Semiconductor Corporation

TSM60NB041PW C1G

bahagi stock: 3156

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 78A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 21.7A, 10V,

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TSM80N08CZ C0G
Taiwan Semiconductor Corporation

TSM80N08CZ C0G

bahagi stock: 4592

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 75V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 80A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V,

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TSM3N80CZ C0G
Taiwan Semiconductor Corporation

TSM3N80CZ C0G

bahagi stock: 5304

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 800V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 3A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V,

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TSM4NB60CI C0G
Taiwan Semiconductor Corporation

TSM4NB60CI C0G

bahagi stock: 5085

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V,

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TSM7NC60CF C0G
Taiwan Semiconductor Corporation

TSM7NC60CF C0G

bahagi stock: 5368

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 7A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V,

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TSM8N80CZ C0G
Taiwan Semiconductor Corporation

TSM8N80CZ C0G

bahagi stock: 5368

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 800V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 8A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4A, 10V,

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TSM60NB260CI C0G
Taiwan Semiconductor Corporation

TSM60NB260CI C0G

bahagi stock: 5139

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 13A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 260 mOhm @ 3.9A, 10V,

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TSM60NB099CZ C0G
Taiwan Semiconductor Corporation

TSM60NB099CZ C0G

bahagi stock: 4373

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 38A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 99 mOhm @ 11.3A, 10V,

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TSM9N90ECZ C0G
Taiwan Semiconductor Corporation

TSM9N90ECZ C0G

bahagi stock: 5238

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 900V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 9A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V,

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TSM15N50CZ C0G
Taiwan Semiconductor Corporation

TSM15N50CZ C0G

bahagi stock: 5115

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 500V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 14A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V,

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TSM4N90CZ C0G
Taiwan Semiconductor Corporation

TSM4N90CZ C0G

bahagi stock: 5357

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 900V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V,

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TSM4N80CZ C0G
Taiwan Semiconductor Corporation

TSM4N80CZ C0G

bahagi stock: 5244

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 800V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V,

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TSM10N80CZ C0G
Taiwan Semiconductor Corporation

TSM10N80CZ C0G

bahagi stock: 5325

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 800V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 9.5A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V,

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TSM4425CS RLG
Taiwan Semiconductor Corporation

TSM4425CS RLG

bahagi stock: 6339

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 30V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 11A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V,

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TSM10NC65CF C0G
Taiwan Semiconductor Corporation

TSM10NC65CF C0G

bahagi stock: 4964

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 650V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 10A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V,

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TSM5NC50CZ C0G
Taiwan Semiconductor Corporation

TSM5NC50CZ C0G

bahagi stock: 5244

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 500V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 5A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 2.5A, 10V,

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TSM60NB380CF C0G
Taiwan Semiconductor Corporation

TSM60NB380CF C0G

bahagi stock: 5263

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 11A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 2.7A, 10V,

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TSM4NB65CI C0G
Taiwan Semiconductor Corporation

TSM4NB65CI C0G

bahagi stock: 5335

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 650V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.37 Ohm @ 2A, 10V,

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TSM70N600CH C5G
Taiwan Semiconductor Corporation

TSM70N600CH C5G

bahagi stock: 4269

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 700V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 8A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V,

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TSM7N90CZ C0G
Taiwan Semiconductor Corporation

TSM7N90CZ C0G

bahagi stock: 5235

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 900V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 7A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V,

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TSM15N50CI C0G
Taiwan Semiconductor Corporation

TSM15N50CI C0G

bahagi stock: 5196

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 500V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 14A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V,

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TSM80N950CI C0G
Taiwan Semiconductor Corporation

TSM80N950CI C0G

bahagi stock: 5392

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 800V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 6A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 950 mOhm @ 2A, 10V,

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TSM60N380CI C0G
Taiwan Semiconductor Corporation

TSM60N380CI C0G

bahagi stock: 5213

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 11A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V,

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TSM85N10CZ C0G
Taiwan Semiconductor Corporation

TSM85N10CZ C0G

bahagi stock: 4800

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 100V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 81A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V,

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TSM9N90ECI C0G
Taiwan Semiconductor Corporation

TSM9N90ECI C0G

bahagi stock: 5150

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 900V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 9A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V,

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TSM8N80CI C0G
Taiwan Semiconductor Corporation

TSM8N80CI C0G

bahagi stock: 4380

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 800V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 8A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4A, 10V,

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