Mga Diode - Mga Rectifier - Single

Bahay
Mga Diode - Mga Rectifier - Single

Taiwan Semiconductor Corporation

SF22G B0G

bahagi stock: 102

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SRAS8100HMNG

bahagi stock: 100

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR005 R0G

bahagi stock: 140

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 500mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 500mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFS1606GHMNG

bahagi stock: 73

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 16A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

HT12G A1G

bahagi stock: 141

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

MBR7100HC0G

bahagi stock: 173

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 7.5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 920mV @ 7.5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAS20100 MNG

bahagi stock: 98

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 920mV @ 20A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR320 R0G

bahagi stock: 148

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 3A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 3A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF4005 B0G

bahagi stock: 123

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

SRA820 C0G

bahagi stock: 80

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 20V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF1G R1G

bahagi stock: 97

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SR320HR0G

bahagi stock: 122

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 3A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 3A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF11G R0G

bahagi stock: 127

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SR010 R0G

bahagi stock: 164

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 500mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 850mV @ 500mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR520HA0G

bahagi stock: 122

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.05V @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF12G R0G

bahagi stock: 101

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SF11GHA0G

bahagi stock: 106

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

HER108G R0G

bahagi stock: 148

Uri ng Diode: Standard, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

SR104 R0G

bahagi stock: 88

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 40V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAS2040HMNG

bahagi stock: 118

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 40V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 570mV @ 20A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR510HR0G

bahagi stock: 133

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 850mV @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HER101G A0G

bahagi stock: 149

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SFAF1001G C0G

bahagi stock: 146

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 10A, Boltahe - Ipasa (Vf) (Max) @ Kung: 975mV @ 10A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

UF1D R0G

bahagi stock: 104

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SF805GHC0G

bahagi stock: 138

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 300V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

HER305G A0G

bahagi stock: 153

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 3A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 3A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SFS1607GHMNG

bahagi stock: 153

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 500V, Kasalukuyang - Average na Naituwid (Io): 16A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SRAS20100HMNG

bahagi stock: 169

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 920mV @ 20A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR502 R0G

bahagi stock: 145

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 20V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HT18G R0G

bahagi stock: 94

Uri ng Diode: Standard, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

SF2001G C0G

bahagi stock: 166

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 975mV @ 10A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SR505 B0G

bahagi stock: 159

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

FR105G R0G

bahagi stock: 80

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250ns,

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Taiwan Semiconductor Corporation

SF1606GHC0G

bahagi stock: 72

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 16A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SFA807GHC0G

bahagi stock: 104

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 500V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SRA830 C0G

bahagi stock: 167

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 30V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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3600

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