Mga Diode - Mga Rectifier - Single | Discrete Semiconductor Products | 100

SF15G A0G

bahagi stock: 99

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 300V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SR102 R1G

bahagi stock: 121

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 20V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFT16G A0G

bahagi stock: 105

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

MUR190 A0G

bahagi stock: 125

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 900V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

SRT13 A1G

bahagi stock: 169

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 30V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

FR106G R1G

bahagi stock: 175

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500ns,

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Taiwan Semiconductor Corporation

GPAS1003 MNG

bahagi stock: 81

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 10A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 10A, Bilis: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAS2060 MNG

bahagi stock: 129

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 60V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 20A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRA840 C0G

bahagi stock: 102

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 40V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

FR152GHA0G

bahagi stock: 165

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1.5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1.5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150ns,

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Taiwan Semiconductor Corporation

SRAF890HC0G

bahagi stock: 126

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 90V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 850mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

F1T7GHR0G

bahagi stock: 87

Uri ng Diode: Standard, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500ns,

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Taiwan Semiconductor Corporation

SR002 R1G

bahagi stock: 117

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 20V, Kasalukuyang - Average na Naituwid (Io): 500mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 500mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

FR105G R1G

bahagi stock: 105

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250ns,

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Taiwan Semiconductor Corporation

UF1GHB0G

bahagi stock: 161

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SRT16HA0G

bahagi stock: 133

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 60V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF45GHA0G

bahagi stock: 90

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 300V, Kasalukuyang - Average na Naituwid (Io): 4A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 4A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SR1030HC0G

bahagi stock: 108

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 30V, Kasalukuyang - Average na Naituwid (Io): 10A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAS2050HMNG

bahagi stock: 169

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 20A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

F1T5G A1G

bahagi stock: 103

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250ns,

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Taiwan Semiconductor Corporation

MUR190AHB0G

bahagi stock: 107

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 900V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

HER107G A0G

bahagi stock: 150

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

SRAF1030HC0G

bahagi stock: 121

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 30V, Kasalukuyang - Average na Naituwid (Io): 10A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 10A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF32GHA0G

bahagi stock: 163

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 3A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 3A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SR810HB0G

bahagi stock: 101

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 920mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF1GHA0G

bahagi stock: 121

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SF15GHR1G

bahagi stock: 100

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 300V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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Taiwan Semiconductor Corporation

SRA8150HC0G

bahagi stock: 147

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 150V, Kasalukuyang - Average na Naituwid (Io): 8A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 8A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HER606G A0G

bahagi stock: 152

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 6A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 6A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

F1T2G R0G

bahagi stock: 152

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150ns,

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Taiwan Semiconductor Corporation

SRAF530HC0G

bahagi stock: 116

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 30V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HT15G A0G

bahagi stock: 171

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

SR106 R1G

bahagi stock: 132

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 60V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF1BHB0G

bahagi stock: 118

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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Taiwan Semiconductor Corporation

UF1KHB0G

bahagi stock: 114

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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Taiwan Semiconductor Corporation

SFT12G A0G

bahagi stock: 115

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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