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Mga Diode - Mga Rectifier - Single

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  • Mga Diode - Mga Rectifier - Single
S1BL RUG
Taiwan Semiconductor Corporation

S1BL RUG

bahagi stock: 116

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8µs,

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SR204HR0G
Taiwan Semiconductor Corporation

SR204HR0G

bahagi stock: 169

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 40V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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SS29LHR3G
Taiwan Semiconductor Corporation

SS29LHR3G

bahagi stock: 160

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 90V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 850mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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RS1JL RUG
Taiwan Semiconductor Corporation

RS1JL RUG

bahagi stock: 159

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 800mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 800mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250ns,

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SS25L R3G
Taiwan Semiconductor Corporation

SS25L R3G

bahagi stock: 156

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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UG56GHA0G
Taiwan Semiconductor Corporation

UG56GHA0G

bahagi stock: 160

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.55V @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20ns,

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SS110L R3G
Taiwan Semiconductor Corporation

SS110L R3G

bahagi stock: 181

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 800mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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MUR420HB0G
Taiwan Semiconductor Corporation

MUR420HB0G

bahagi stock: 104

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 4A, Boltahe - Ipasa (Vf) (Max) @ Kung: 890mV @ 4A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25ns,

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SS26LHRUG
Taiwan Semiconductor Corporation

SS26LHRUG

bahagi stock: 95

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 60V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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RS1KL RUG
Taiwan Semiconductor Corporation

RS1KL RUG

bahagi stock: 140

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 800mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 800mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500ns,

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RS1KL R3G
Taiwan Semiconductor Corporation

RS1KL R3G

bahagi stock: 153

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 800mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 800mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500ns,

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RSFGL R3G
Taiwan Semiconductor Corporation

RSFGL R3G

bahagi stock: 144

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 400V, Kasalukuyang - Average na Naituwid (Io): 500mA, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 500mA, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150ns,

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SS310LHM2G
Taiwan Semiconductor Corporation

SS310LHM2G

bahagi stock: 165

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 3A, Boltahe - Ipasa (Vf) (Max) @ Kung: 850mV @ 3A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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SS16L RUG
Taiwan Semiconductor Corporation

SS16L RUG

bahagi stock: 140

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 60V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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LL4006G L0
Taiwan Semiconductor Corporation

LL4006G L0

bahagi stock: 189

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io),

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SRT16 A1G
Taiwan Semiconductor Corporation

SRT16 A1G

bahagi stock: 144

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 60V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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S1JL R3G
Taiwan Semiconductor Corporation

S1JL R3G

bahagi stock: 115

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8µs,

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SS215L RUG
Taiwan Semiconductor Corporation

SS215L RUG

bahagi stock: 128

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 150V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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SS110L RUG
Taiwan Semiconductor Corporation

SS110L RUG

bahagi stock: 182

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 100V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 800mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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S1DLHR3G
Taiwan Semiconductor Corporation

S1DLHR3G

bahagi stock: 104

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 200V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8µs,

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ES1JL RUG
Taiwan Semiconductor Corporation

ES1JL RUG

bahagi stock: 143

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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SS22L R3G
Taiwan Semiconductor Corporation

SS22L R3G

bahagi stock: 91

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 20V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 500mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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S1KL RUG
Taiwan Semiconductor Corporation

S1KL RUG

bahagi stock: 101

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8µs,

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HER206G B0G
Taiwan Semiconductor Corporation

HER206G B0G

bahagi stock: 114

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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SS115L RUG
Taiwan Semiconductor Corporation

SS115L RUG

bahagi stock: 108

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 150V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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S1ML RVG
Taiwan Semiconductor Corporation

S1ML RVG

bahagi stock: 159

Uri ng Diode: Standard, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8µs,

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HER207G B0G
Taiwan Semiconductor Corporation

HER207G B0G

bahagi stock: 157

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 800V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.7V @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75ns,

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LL4007G L0
Taiwan Semiconductor Corporation

LL4007G L0

bahagi stock: 130

Uri ng Diode: Standard, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.1V @ 1A, Bilis: Standard Recovery >500ns, > 200mA (Io),

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UG58GHA0G
Taiwan Semiconductor Corporation

UG58GHA0G

bahagi stock: 148

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 2.1V @ 5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20ns,

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SR215HA0G
Taiwan Semiconductor Corporation

SR215HA0G

bahagi stock: 172

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 150V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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HER151G B0G
Taiwan Semiconductor Corporation

HER151G B0G

bahagi stock: 120

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 1.5A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 1.5A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns,

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S3JHR7G
Taiwan Semiconductor Corporation

S3JHR7G

bahagi stock: 190

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 600V, Kasalukuyang - Average na Naituwid (Io): 3A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.15V @ 3A, Bilis: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5µs,

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ES1FL RUG
Taiwan Semiconductor Corporation

ES1FL RUG

bahagi stock: 174

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 300V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 1.3V @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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SK20H45 A0G
Taiwan Semiconductor Corporation

SK20H45 A0G

bahagi stock: 187

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 45V, Kasalukuyang - Average na Naituwid (Io): 20A, Boltahe - Ipasa (Vf) (Max) @ Kung: 550mV @ 20A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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SR205 A0G
Taiwan Semiconductor Corporation

SR205 A0G

bahagi stock: 193

Uri ng Diode: Schottky, Boltahe - DC Reverse (Vr) (Max): 50V, Kasalukuyang - Average na Naituwid (Io): 2A, Boltahe - Ipasa (Vf) (Max) @ Kung: 700mV @ 2A, Bilis: Fast Recovery =< 500ns, > 200mA (Io),

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ES1C R3G
Taiwan Semiconductor Corporation

ES1C R3G

bahagi stock: 154

Uri ng Diode: Standard, Boltahe - DC Reverse (Vr) (Max): 150V, Kasalukuyang - Average na Naituwid (Io): 1A, Boltahe - Ipasa (Vf) (Max) @ Kung: 950mV @ 1A, Bilis: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35ns,

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