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Transistors - FETs, MOSFETs - Single

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  • Transistors - FETs, MOSFETs - Single
TK31V60W,LVQ
Toshiba Semiconductor and Storage

TK31V60W,LVQ

bahagi stock: 15568

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 30.8A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V,

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TPW4R50ANH,L1Q
Toshiba Semiconductor and Storage

TPW4R50ANH,L1Q

bahagi stock: 93811

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 100V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 92A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 46A, 10V,

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SSM6J215FE(TE85L,F
Toshiba Semiconductor and Storage

SSM6J215FE(TE85L,F

bahagi stock: 179583

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 3.4A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 4.5V,

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SSM3K123TU,LF
Toshiba Semiconductor and Storage

SSM3K123TU,LF

bahagi stock: 154973

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4.2A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V,

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TK35N65W5,S1F
Toshiba Semiconductor and Storage

TK35N65W5,S1F

bahagi stock: 8137

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 650V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 35A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V,

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TK31N60W5,S1VF
Toshiba Semiconductor and Storage

TK31N60W5,S1VF

bahagi stock: 10406

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 30.8A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 99 mOhm @ 15.4A, 10V,

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TK35A65W,S5X
Toshiba Semiconductor and Storage

TK35A65W,S5X

bahagi stock: 10249

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 650V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 35A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.5A, 10V,

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SSM3K72CTC,L3F
Toshiba Semiconductor and Storage

SSM3K72CTC,L3F

bahagi stock: 165309

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 150mA (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TK31E60X,S1X
Toshiba Semiconductor and Storage

TK31E60X,S1X

bahagi stock: 12874

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 30.8A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 88 mOhm @ 9.4A, 10V,

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TPW1R306PL,L1Q
Toshiba Semiconductor and Storage

TPW1R306PL,L1Q

bahagi stock: 52018

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 260A (Tc), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.29 mOhm @ 50A, 10V,

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SSM3J120TU,LF
Toshiba Semiconductor and Storage

SSM3J120TU,LF

bahagi stock: 181550

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V,

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TK31E60W,S1VX
Toshiba Semiconductor and Storage

TK31E60W,S1VX

bahagi stock: 10871

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 30.8A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

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SSM3J351R,LF
Toshiba Semiconductor and Storage

SSM3J351R,LF

bahagi stock: 125673

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 3.5A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V,

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TPCA8026(TE12L,Q,M
Toshiba Semiconductor and Storage

TPCA8026(TE12L,Q,M

bahagi stock: 77538

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 30V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 45A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V,

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SSM3K7002CFU,LF
Toshiba Semiconductor and Storage

SSM3K7002CFU,LF

bahagi stock: 113529

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 170mA (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TPH5900CNH,L1Q
Toshiba Semiconductor and Storage

TPH5900CNH,L1Q

bahagi stock: 139118

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 150V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 9A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V,

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TK39N60W5,S1VF
Toshiba Semiconductor and Storage

TK39N60W5,S1VF

bahagi stock: 10492

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 38.8A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V,

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SSM3J334R,LF
Toshiba Semiconductor and Storage

SSM3J334R,LF

bahagi stock: 114000

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 30V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V,

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SSM3K333R,LF
Toshiba Semiconductor and Storage

SSM3K333R,LF

bahagi stock: 181888

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 30V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 6A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V,

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SSM3K37FS,LF
Toshiba Semiconductor and Storage

SSM3K37FS,LF

bahagi stock: 164622

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 200mA (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

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SSM6K781G,LF
Toshiba Semiconductor and Storage

SSM6K781G,LF

bahagi stock: 168957

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 12V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 7A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V,

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SSM3K72KCT,L3F
Toshiba Semiconductor and Storage

SSM3K72KCT,L3F

bahagi stock: 168170

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 400mA (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

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SSM3J130TU,LF
Toshiba Semiconductor and Storage

SSM3J130TU,LF

bahagi stock: 194401

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 4.4A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 25.8 mOhm @ 4A, 4.5V,

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SSM3K16CT,L3F
Toshiba Semiconductor and Storage

SSM3K16CT,L3F

bahagi stock: 21564

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 20V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 100mA (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V,

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TK16A60W,S4X
Toshiba Semiconductor and Storage

TK16A60W,S4X

bahagi stock: 29509

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 15.8A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

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TK9J90E,S1E
Toshiba Semiconductor and Storage

TK9J90E,S1E

bahagi stock: 20952

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 900V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 9A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V,

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TK14C65W5,S1Q
Toshiba Semiconductor and Storage

TK14C65W5,S1Q

bahagi stock: 26069

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 650V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 13.7A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

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TK13A50DA(STA4,Q,M
Toshiba Semiconductor and Storage

TK13A50DA(STA4,Q,M

bahagi stock: 30522

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 500V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 12.5A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 470 mOhm @ 6.3A, 10V,

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SSM3J132TU,LF
Toshiba Semiconductor and Storage

SSM3J132TU,LF

bahagi stock: 103604

Uri ng FET: P-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 12V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 5.4A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 5A, 4.5V,

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TK12A60W,S4VX
Toshiba Semiconductor and Storage

TK12A60W,S4VX

bahagi stock: 20769

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 11.5A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V,

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TK15A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A60D(STA4,Q,M)

bahagi stock: 24154

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 15A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 370 mOhm @ 7.5A, 10V,

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TK9A65W,S5X
Toshiba Semiconductor and Storage

TK9A65W,S5X

bahagi stock: 30056

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 650V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 9.3A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 4.6A, 10V,

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TK11A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK11A55D(STA4,Q,M)

bahagi stock: 31876

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 550V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 11A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.5A, 10V,

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TK20V60W,LVQ
Toshiba Semiconductor and Storage

TK20V60W,LVQ

bahagi stock: 26594

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 600V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 20A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 10A, 10V,

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T2N7002AK,LM
Toshiba Semiconductor and Storage

T2N7002AK,LM

bahagi stock: 154374

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 60V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 200mA (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TK14A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK14A55D(STA4,Q,M)

bahagi stock: 26114

Uri ng FET: N-Channel, Teknolohiya: MOSFET (Metal Oxide), Patuyuin ang Pinagmulan ng Boltahe (Vdss): 550V, Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C: 14A (Ta), Boltahe sa Pagmamaneho (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V,

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