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Diode - Zener - Single

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  • Diode - Zener - Single
BZT52B8V2S RRG
Taiwan Semiconductor Corporation

BZT52B8V2S RRG

bahagi stock: 179

Boltahe - Zener (Nom) (Vz): 8.2V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 630nA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C11K RKG
Taiwan Semiconductor Corporation

BZT52C11K RKG

bahagi stock: 228

Boltahe - Zener (Nom) (Vz): 11V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 20 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 8V,

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BZT52C3V9K RKG
Taiwan Semiconductor Corporation

BZT52C3V9K RKG

bahagi stock: 250

Boltahe - Zener (Nom) (Vz): 3.9V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 5µA @ 1V,

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BZT52C33-G RHG
Taiwan Semiconductor Corporation

BZT52C33-G RHG

bahagi stock: 173

Boltahe - Zener (Nom) (Vz): 33V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 23.1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C3V6S RRG
Taiwan Semiconductor Corporation

BZT52C3V6S RRG

bahagi stock: 230

Boltahe - Zener (Nom) (Vz): 3.6V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 4.5µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B36 RHG
Taiwan Semiconductor Corporation

BZT52B36 RHG

bahagi stock: 260

Boltahe - Zener (Nom) (Vz): 36V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 25.2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C36-G RHG
Taiwan Semiconductor Corporation

BZT52C36-G RHG

bahagi stock: 223

Boltahe - Zener (Nom) (Vz): 36V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 25.2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B24S RRG
Taiwan Semiconductor Corporation

BZT52B24S RRG

bahagi stock: 167

Boltahe - Zener (Nom) (Vz): 24V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 70 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 16.8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B4V7 RHG
Taiwan Semiconductor Corporation

BZT52B4V7 RHG

bahagi stock: 199

Boltahe - Zener (Nom) (Vz): 4.7V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2.7µA @ 2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C18 RHG
Taiwan Semiconductor Corporation

BZT52C18 RHG

bahagi stock: 259

Boltahe - Zener (Nom) (Vz): 18V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 45 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 12.6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B36S RRG
Taiwan Semiconductor Corporation

BZT52B36S RRG

bahagi stock: 225

Boltahe - Zener (Nom) (Vz): 36V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 25.2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B22S RRG
Taiwan Semiconductor Corporation

BZT52B22S RRG

bahagi stock: 184

Boltahe - Zener (Nom) (Vz): 22V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 55 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 15.4V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C13S RRG
Taiwan Semiconductor Corporation

BZT52C13S RRG

bahagi stock: 206

Boltahe - Zener (Nom) (Vz): 13V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 30 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 90nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C16K RKG
Taiwan Semiconductor Corporation

BZT52C16K RKG

bahagi stock: 265

Boltahe - Zener (Nom) (Vz): 16V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 40 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 12V,

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BZT52C7V5K RKG
Taiwan Semiconductor Corporation

BZT52C7V5K RKG

bahagi stock: 192

Boltahe - Zener (Nom) (Vz): 7.5V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 500nA @ 4V,

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BZT52C9V1S RRG
Taiwan Semiconductor Corporation

BZT52C9V1S RRG

bahagi stock: 253

Boltahe - Zener (Nom) (Vz): 9.1V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 450nA @ 6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C2V7-G RHG
Taiwan Semiconductor Corporation

BZT52C2V7-G RHG

bahagi stock: 259

Boltahe - Zener (Nom) (Vz): 2.7V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 100 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 20µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B56 RHG
Taiwan Semiconductor Corporation

BZT52B56 RHG

bahagi stock: 252

Boltahe - Zener (Nom) (Vz): 56V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 200 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 39.2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B13-G RHG
Taiwan Semiconductor Corporation

BZT52B13-G RHG

bahagi stock: 201

Boltahe - Zener (Nom) (Vz): 13V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 30 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C3V3 RHG
Taiwan Semiconductor Corporation

BZT52C3V3 RHG

bahagi stock: 264

Boltahe - Zener (Nom) (Vz): 3.3V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 95 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 4.5µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C47K RKG
Taiwan Semiconductor Corporation

BZT52C47K RKG

bahagi stock: 226

Boltahe - Zener (Nom) (Vz): 47V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 170 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2µA @ 36V,

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BZT52C27K RKG
Taiwan Semiconductor Corporation

BZT52C27K RKG

bahagi stock: 215

Boltahe - Zener (Nom) (Vz): 27V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 21V,

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BZT52C22 RHG
Taiwan Semiconductor Corporation

BZT52C22 RHG

bahagi stock: 205

Boltahe - Zener (Nom) (Vz): 22V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 55 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 15.4V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C24 RHG
Taiwan Semiconductor Corporation

BZT52C24 RHG

bahagi stock: 211

Boltahe - Zener (Nom) (Vz): 24V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 70 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 16.8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B12-G RHG
Taiwan Semiconductor Corporation

BZT52B12-G RHG

bahagi stock: 190

Boltahe - Zener (Nom) (Vz): 12V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 25 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C3V3K RKG
Taiwan Semiconductor Corporation

BZT52C3V3K RKG

bahagi stock: 256

Boltahe - Zener (Nom) (Vz): 3.3V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 95 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 20µA @ 1V,

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BZT52C13 RHG
Taiwan Semiconductor Corporation

BZT52C13 RHG

bahagi stock: 182

Boltahe - Zener (Nom) (Vz): 13V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 30 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 90nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C56 RHG
Taiwan Semiconductor Corporation

BZT52C56 RHG

bahagi stock: 180

Boltahe - Zener (Nom) (Vz): 56V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 200 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 39.2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C4V3S RRG
Taiwan Semiconductor Corporation

BZT52C4V3S RRG

bahagi stock: 194

Boltahe - Zener (Nom) (Vz): 4.3V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2.7µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZX84C24 RFG
Taiwan Semiconductor Corporation

BZX84C24 RFG

bahagi stock: 227

Boltahe - Zener (Nom) (Vz): 24V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 70 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 16.8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B20 RHG
Taiwan Semiconductor Corporation

BZT52B20 RHG

bahagi stock: 213

Boltahe - Zener (Nom) (Vz): 20V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 55 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 14V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B5V1S RRG
Taiwan Semiconductor Corporation

BZT52B5V1S RRG

bahagi stock: 251

Boltahe - Zener (Nom) (Vz): 5.1V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 60 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 1.8µA @ 2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C20 RHG
Taiwan Semiconductor Corporation

BZT52C20 RHG

bahagi stock: 179

Boltahe - Zener (Nom) (Vz): 20V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 55 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 14V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C8V2-G RHG
Taiwan Semiconductor Corporation

BZT52C8V2-G RHG

bahagi stock: 221

Boltahe - Zener (Nom) (Vz): 8.2V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 700nA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B2V7 RHG
Taiwan Semiconductor Corporation

BZT52B2V7 RHG

bahagi stock: 215

Boltahe - Zener (Nom) (Vz): 2.7V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 100 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 18µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZX84C8V2 RFG
Taiwan Semiconductor Corporation

BZX84C8V2 RFG

bahagi stock: 265

Boltahe - Zener (Nom) (Vz): 8.2V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 700nA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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