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Diode - Zener - Single

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  • Diode - Zener - Single
BZT52B3V0S RRG
Taiwan Semiconductor Corporation

BZT52B3V0S RRG

bahagi stock: 227

Boltahe - Zener (Nom) (Vz): 3V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 100 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 9µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C3V0K RKG
Taiwan Semiconductor Corporation

BZT52C3V0K RKG

bahagi stock: 204

Boltahe - Zener (Nom) (Vz): 3V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 100 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 50µA @ 1V,

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BZT52B68S RRG
Taiwan Semiconductor Corporation

BZT52B68S RRG

bahagi stock: 195

Boltahe - Zener (Nom) (Vz): 68V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 240 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 47.6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C15-G RHG
Taiwan Semiconductor Corporation

BZT52C15-G RHG

bahagi stock: 183

Boltahe - Zener (Nom) (Vz): 15V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 30 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 10.5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B8V2-G RHG
Taiwan Semiconductor Corporation

BZT52B8V2-G RHG

bahagi stock: 252

Boltahe - Zener (Nom) (Vz): 8.2V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 700nA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C11S RRG
Taiwan Semiconductor Corporation

BZT52C11S RRG

bahagi stock: 255

Boltahe - Zener (Nom) (Vz): 11V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 20 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 90nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZX84C30 RFG
Taiwan Semiconductor Corporation

BZX84C30 RFG

bahagi stock: 250

Boltahe - Zener (Nom) (Vz): 30V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 21V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B12S RRG
Taiwan Semiconductor Corporation

BZT52B12S RRG

bahagi stock: 216

Boltahe - Zener (Nom) (Vz): 12V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 25 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 90nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C6V2S RRG
Taiwan Semiconductor Corporation

BZT52C6V2S RRG

bahagi stock: 183

Boltahe - Zener (Nom) (Vz): 6.2V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 10 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2.7µA @ 4V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZX84C4V3 RFG
Taiwan Semiconductor Corporation

BZX84C4V3 RFG

bahagi stock: 222

Boltahe - Zener (Nom) (Vz): 4.3V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 3µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZX84C10 RFG
Taiwan Semiconductor Corporation

BZX84C10 RFG

bahagi stock: 205

Boltahe - Zener (Nom) (Vz): 10V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 20 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 200nA @ 7V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B3V3S RRG
Taiwan Semiconductor Corporation

BZT52B3V3S RRG

bahagi stock: 173

Boltahe - Zener (Nom) (Vz): 3.3V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 95 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 4.5µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B4V3S RRG
Taiwan Semiconductor Corporation

BZT52B4V3S RRG

bahagi stock: 247

Boltahe - Zener (Nom) (Vz): 4.3V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2.7µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B30-G RHG
Taiwan Semiconductor Corporation

BZT52B30-G RHG

bahagi stock: 253

Boltahe - Zener (Nom) (Vz): 30V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 21V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C4V7K RKG
Taiwan Semiconductor Corporation

BZT52C4V7K RKG

bahagi stock: 264

Boltahe - Zener (Nom) (Vz): 4.7V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2µA @ 1V,

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BZT52B9V1 RHG
Taiwan Semiconductor Corporation

BZT52B9V1 RHG

bahagi stock: 173

Boltahe - Zener (Nom) (Vz): 9.1V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 450nA @ 6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C12K RKG
Taiwan Semiconductor Corporation

BZT52C12K RKG

bahagi stock: 229

Boltahe - Zener (Nom) (Vz): 12V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 25 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 9V,

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BZT52B8V2 RHG
Taiwan Semiconductor Corporation

BZT52B8V2 RHG

bahagi stock: 169

Boltahe - Zener (Nom) (Vz): 8.2V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 630nA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B2V7-G RHG
Taiwan Semiconductor Corporation

BZT52B2V7-G RHG

bahagi stock: 229

Boltahe - Zener (Nom) (Vz): 2.7V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 100 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 20µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZX84C6V8 RFG
Taiwan Semiconductor Corporation

BZX84C6V8 RFG

bahagi stock: 255

Boltahe - Zener (Nom) (Vz): 6.8V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2µA @ 4V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B24-G RHG
Taiwan Semiconductor Corporation

BZT52B24-G RHG

bahagi stock: 250

Boltahe - Zener (Nom) (Vz): 24V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 70 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 16.8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B18-G RHG
Taiwan Semiconductor Corporation

BZT52B18-G RHG

bahagi stock: 206

Boltahe - Zener (Nom) (Vz): 18V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 45 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 12.6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C18-G RHG
Taiwan Semiconductor Corporation

BZT52C18-G RHG

bahagi stock: 236

Boltahe - Zener (Nom) (Vz): 18V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 45 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 12.6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C7V5-G RHG
Taiwan Semiconductor Corporation

BZT52C7V5-G RHG

bahagi stock: 227

Boltahe - Zener (Nom) (Vz): 7.5V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 1µA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C33 RHG
Taiwan Semiconductor Corporation

BZT52C33 RHG

bahagi stock: 185

Boltahe - Zener (Nom) (Vz): 33V, Pagpaparaya: ±5%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 23V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B9V1-G RHG
Taiwan Semiconductor Corporation

BZT52B9V1-G RHG

bahagi stock: 174

Boltahe - Zener (Nom) (Vz): 9.1V, Pagpaparaya: ±2%, Lakas - Max: 410mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 500nA @ 6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZX584B7V5 RSG
Taiwan Semiconductor Corporation

BZX584B7V5 RSG

bahagi stock: 256

Boltahe - Zener (Nom) (Vz): 7.5V, Pagpaparaya: ±2%, Lakas - Max: 150mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 1µA @ 5V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZX84C12 RFG
Taiwan Semiconductor Corporation

BZX84C12 RFG

bahagi stock: 208

Boltahe - Zener (Nom) (Vz): 12V, Pagpaparaya: ±5%, Lakas - Max: 300mW, Impedance (Max) (Zzt): 25 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 8V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C68S RRG
Taiwan Semiconductor Corporation

BZT52C68S RRG

bahagi stock: 266

Boltahe - Zener (Nom) (Vz): 68V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 240 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 47.6V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C6V8-G RHG
Taiwan Semiconductor Corporation

BZT52C6V8-G RHG

bahagi stock: 217

Boltahe - Zener (Nom) (Vz): 6.8V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 15 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 2µA @ 4V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C10S RRG
Taiwan Semiconductor Corporation

BZT52C10S RRG

bahagi stock: 205

Boltahe - Zener (Nom) (Vz): 10V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 20 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 180nA @ 7V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52B20S RRG
Taiwan Semiconductor Corporation

BZT52B20S RRG

bahagi stock: 174

Boltahe - Zener (Nom) (Vz): 20V, Pagpaparaya: ±2%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 55 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 14V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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BZT52C51K RKG
Taiwan Semiconductor Corporation

BZT52C51K RKG

bahagi stock: 247

Boltahe - Zener (Nom) (Vz): 51V, Pagpaparaya: ±5%, Lakas - Max: 200mW, Impedance (Max) (Zzt): 180 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 1µA @ 39V,

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BZT52C30-G RHG
Taiwan Semiconductor Corporation

BZT52C30-G RHG

bahagi stock: 172

Boltahe - Zener (Nom) (Vz): 30V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 80 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 100nA @ 21V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52C4V3-G RHG
Taiwan Semiconductor Corporation

BZT52C4V3-G RHG

bahagi stock: 257

Boltahe - Zener (Nom) (Vz): 4.3V, Pagpaparaya: ±5%, Lakas - Max: 350mW, Impedance (Max) (Zzt): 90 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 3µA @ 1V, Boltahe - Ipasa (Vf) (Max) @ Kung: 900mV @ 10mA,

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BZT52B16 RHG
Taiwan Semiconductor Corporation

BZT52B16 RHG

bahagi stock: 227

Boltahe - Zener (Nom) (Vz): 16V, Pagpaparaya: ±2%, Lakas - Max: 500mW, Impedance (Max) (Zzt): 40 Ohms, Kasalukuyang - Reverse Leakage @ Vr: 45nA @ 11.2V, Boltahe - Ipasa (Vf) (Max) @ Kung: 1V @ 10mA,

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